UC Santa Barbara’s Solid State Lighting and Energy Electronics Center (SSLEEC) is at the forefront of the fields of lighting and solid-state devices. Read on to learn more about the newly available technology that has emerged out of the Center this past year.
The benefits of Gallium Nitride (GaN) as a semiconductor material are significant and far-reaching. GaN’s power efficiency and unique optical properties position it as the backbone material for the next generation of innovation across a wide swath of devices. Researchers at UC Santa Barbara continue to pioneer advancements in GaN applications and bring this technology to the world just as they did with the emergence of solid state lighting.
This GaN VCSEL achieves high efficiency, high peak power, and long device lifetimes by eliminating degradation to the active region, improving emission intensity, and significantly reducing absorption loss within the cavity.
This planar tunnel junction (TJ) implemented in a III-Nitride-based vertical cavity surface emitting laser (VCSEL) circumvents the typical TJ drawbacks and further reduces the turn-on voltage and results in higher wall-plug efficiency.
Improving on the conventional TJ structure and interlayer design, this technology produces III-Nitride devices that reach new heights in electrical efficiency and optical transparency.
UCSB Researchers have circumvented the device performance consequences of incomplete activation by using p-InGaN/p-AlGaN/p-GaN superlattices (SLs) instead of a conventional bulk p-GaN layer to achieve high hole concentration without the need for hydrogen sidewall diffusion via thermal activation.
Solid-state emitters in the ultraviolet and far-UV ranges are in their early stages and are typically restricted by low efficiency and short device lifetimes. Solutions to these problems continue to emerge out of SSLEEC, respresenting unprecedented opportunities for highly efficient, long-lasting UV light emitters that will transform a host of commercial applications.
This design for ultraviolet (UV) or far-UV LEDs incorporates a novel doped multilayer structure that demonstrates an approximate 300% improvement in output power compared to conventional alternatives.
This technology provides a superior structure and technique to fabricate ultraviolet laser diodes (UVA LDs) on GaN substrates with dislocation densities of less than 1×106 cm-2 and a lifetime of over 10,000 hours.
This technology minimizes or entirely prevents the formation of misfit dislocations at the interface of the heterostructure of III-V compound-based devices — even those grown under large lattice mismatch conditions. The improved performance enables applications in optical integrated circuits (ICs), displays, automobiles, power grids, and more.
This technology produces highly efficient III-nitride devices with high-quality, long-wavelength active regions that achieve the highest-available crystal quality of InGaN and AlGaN layers; nearly three times higher than current market offerings.
This technology improves the layer structure and growth conditions for green InGaN emitters, resulting in higher power output and higher efficiency while growing the devices on or above a strain-relaxed template (SRT).
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