UC Santa Barbara’s Solid State Lighting and Energy Electronics Center (SSLEEC) is at the forefront of the fields of lighting and solid-state devices. Read on to learn more about the newly available technology that has emerged out of the Center this past year.
The benefits of Gallium Nitride (GaN) as a semiconductor material are significant and far-reaching. GaN’s power efficiency and unique optical properties position it as the backbone material for the next generation of innovation across a wide swath of devices. Researchers at UC Santa Barbara continue to pioneer advancements in GaN applications and bring this technology to the world just as they did with the emergence of solid state lighting.
This engineered structure tunes intentional V-defects to optimize lateral hole injection in GaN-based LEDs and laser diodes (LDs). This novel structure improves high-power LED efficiency, increases modulation bandwidth for white LEDs, and enables wider active regions with large quantum well (QW) numbers – compatible with many III-nitride LED structures.
These novel optical elements leverage intense wavelength-tunable reflection and narrow-band wavelength selectivity for solid-state deep UV emitters. This technology competitively disrupts current alternatives due to its high reflectance (>90%), an 85% specular reflection near 200 nm, minimal oxidation, and enables free-standing, natively nitride-based device integration of these elements.
This technology minimizes or entirely prevents the formation of misfit dislocations at the interface of the heterostructure of III-V compound-based devices — even those grown under large lattice mismatch conditions. The improved performance enables applications in optical integrated circuits (ICs), displays, automobiles, power grids, and more.
This technology produces highly efficient III-nitride devices with high-quality, long-wavelength active regions that achieve the highest-available crystal quality of InGaN and AlGaN layers; nearly three times higher than current market offerings.
This technology improves the efficiency of red InGaN emitters by growing smooth buffer layers on mechanically flexible strain-compliant templates (SCTs) for III-nitride-based devices. This technology enables higher crystal quality, lower defects, and higher EQE in LEDs and LDs for next-generation displays.
To meet the demand for highly efficient micro-LEDs for AR/VR applications, this technology enhances key device performance metrics using novel fabrication methods that improve crystal quality, defect density, surface morphology, and growth temperature.
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